Click to expand full text
PFP6N70F / PFF6N70F
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 13.2 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V RoHS PKG
APPLICATION
Low power battery chargers Switch mode power supply (SMPS) AC adaptors
PFP6N70F / PFF6N70F
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) = 2.0 Ω ID = 4.0 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3.