The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
June 2007
PFI7N80G / PFB7N80G
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
Green Package
PFI7N80G/PFB7N80G
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) = 1.9 Ω ID = 7.0 A
TO-262(I2-PAK)
1 2 3
1. Gate 2. Drain 3. Source
Drain
Gate
●
◀▲
● ●
Source
TO-263(D2-PAK)
2
1 3
1. Gate 2. Drain 3.
PFB7N80G Datasheet
