z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely .

z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging WNM2155.

The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit..

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