* 650V@TJ=25°C
* Typ.RDS(on)=1.0 Ω
* Low gate charge
* 100% avalanche tested
* 100% Rg tested D GDS TOT-O22- 0 FG S GD S TO-220F WNM07N65 CC Y .

power switching application and a wide variety of other applications. WNM07N65/WNM07N65F Features
* 650V@TJ=25°C <.

The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power.

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