Datasheet Details
| Part number | WNM01N10 |
|---|---|
| Manufacturer | WillSEMI |
| File Size | 0.96 MB |
| Description | MOSFET |
| Datasheet |
 WNM01N10 Datasheet
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| Part number | WNM01N10 |
|---|---|
| Manufacturer | WillSEMI |
| File Size | 0.96 MB |
| Description | MOSFET |
| Datasheet |
WNM01N10 Datasheet
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|
|
s The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.
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