WNM2046B - MOSFET

WillSEMI

General Description

The WNM2046B is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package DFN1006-3L.

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WNM2046B mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM2046B
Manufacturer	WillSEMI
File Size	1.37 MB
Description	MOSFET
Datasheet	WNM2046B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046B Http://www.sh-willsemi.com G S D Descriptions DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046B is Pb-free.