WPMD2012 mosfet equivalent, mosfet.
z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363
WPMD2012
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z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift
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Shippin.
The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Stand.
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