WPMD2011 Http://www.willsemi.com DFN2x2-6L S1 1 G1 2 D1 6 D1 5 G2 D2 3 D2 4 S2 Pin Configuration (Top View) z Trench Technology z Supper high density cell design .

Standard Product WPMD2011 is Pb-free. Features WPMD2011 Http://www.willsemi.com DFN2x2-6L S1 1 G1 2 D1 6 D1 5 G2 .

The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. S.

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