z-30V/-5A,RDS(ON)= 36mȍ@VGS=- 10V z-30V/-4A,RDS(ON)= 53m\ȍ@VGS=- 4.5V zSuper high density cell design for extremely low RDS (ON) zExceptional on-resistance and maximu.

The WPM4803 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.

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