WPM4801 mosfet equivalent, mosfet.
z-30V/-5.0A,RDS(ON)= 37mȍ@VGS= - 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS= - 4.5V zSuper high density cell design for extremely low
RDS (ON) zExceptional on-resistance and m.
The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are .
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