WPM2009D p-mosfet equivalent, p-mosfet.
z Max Rds(on) 42m @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench .
z Battery charging z Load Switch z Power Switch z DC-DC converter
Pin Connection Top
WPM2009 = Part Number YY = Year W.
This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance. WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package. This device is suited for high po.
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