* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Threshold Voltage
* Small package SOT-23-6L Applicatio.

SOT-23-6L D1 S1 D2 6 54 1 23 G1 S2 G2 Pin configuration (Top view) 6 54 2176 NDYW 1 23 2176 ND Y W = Device Code = .

The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Sta.

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