WMS30N050S mosfet equivalent, n-channel silicon mosfet.
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate .
RoHS
2. Features and benefits
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduct.
WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applicati.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 601.70KB)