WMS30N045S datasheet, mosfet equivalent, WeEn

Features and benefits

* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Switching Losses
* Optimized Gate .

Application

RoHS 2. Features and benefits
* Advance High Cell Density Trench Technology
* Low RDS(on) to Minimize Conduct.

Description

WMS30N045S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applicati.

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