WG50N65LAW1 Key Features
- Maximum junction temperature 175 °C
- Positive Temperature efficient for Easy Parallel Operating
- Very soft, fast recovery anti-parallel diode
- Low saturation Voltage VCE(sat) = 1.3 V(Typ.) @ IC = 50 A
- EMI Improved Design
- Part: WG50N65LAW1
- Manufacturer: WeEn (official site)
- Size: 869.98 KB
Related WeEn Datasheets
| Part Number | Description |
|---|---|
| WG50N65LDJ1 | IGBT |
| WG50N65DHJ | IGBT |
| WG50N65DHJ1 | IGBT |
| WG50N65DHW | IGBT |
| WG50N65HAW1 | IGBT |
WG50N65LAW1 Description
WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applications.