WG50N65LAW1 datasheet, igbt equivalent, WeEn

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datasheet Download (Size : 869.98KB)

Features and benefits

* Maximum junction temperature 175 °C
* Positive Temperature efficient for Easy Parallel Operating
* Very soft, fast recovery anti-parallel diode
* Low sa.

Application

RoHS halogen-Free 2. Features and benefits
* Maximum junction temperature 175 °C
* Positive Temperature effi.

Description

WG50N65LAW1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applicat.

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