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BTA225B-800B Datasheet Preview

BTA225B-800B Datasheet

3Q Hi-Com Triac

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BTA225B-800B
3Q Hi-Com Triac
16 August 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 91 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 800 V
- - 25 A
- - 190 A
- - 209 A
- - 125 °C
2 18 50 mA




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BTA225B-800B Datasheet Preview

BTA225B-800B Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA225B-800B
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 30 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 25 A;
dVcom/dt = 20 V/µs; (without snubber
condition); gate open circuit; Fig. 12
Min Typ Max Unit
2 21 50 mA
2 34 50 mA
- 31 60 mA
- 1.3 1.55 V
1000 4000 -
V/µs
- 44 - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
2
13
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA225B-800B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BTA225B-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 August 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 13


Part Number BTA225B-800B
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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