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BTA2008-1000DN Datasheet Preview

BTA2008-1000DN Datasheet

3Q Triac

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BTA2008-1000DN
3Q Triac
Rev - 01 24 July 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series DN" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with very sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM non-repetitive peak
forward current
Tj junction temperature
Conditions
square-wave pulse; Tlead ≤ 57 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
Values
1000
0.8
9
9.9
125
Unit
V
A
A
A
°C




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BTA2008-1000DN Datasheet Preview

BTA2008-1000DN Datasheet

3Q Triac

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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 0.85 A; Tj = 25 °C; Fig. 10
VDM = 670 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A;
dVcom/dt = 10 V/μs; gate open circuit;
VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A;
dVcom/dt = 1 V/μs; gate open circuit
BTA2008-1000DN
3Q Triac
Min Typ Max Unit
0.25 -
5 mA
0.25 -
5 mA
0.25 -
5 mA
- - 10 mA
- 1.3 1.6 V
- 150 - V/μs
0.5 - - A/ms
1 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2
main terminal 2
2G
gate
3 T1
main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA2008-1000DN
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
7. Marking
Table 4. Marking codes
Type number
BTA2008-1000DN
BTA2008-1000DN
Product data sheet
Marking codes
BTA2008-1000DN
All information provided in this document is subject to legal disclaimers.
24 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 12


Part Number BTA2008-1000DN
Description 3Q Triac
Maker WeEn
Total Page 12 Pages
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