SPR60P03 - P-Channel Enhancement Mode Power MOSFET

WILLAS

General Description

The SPR60P03 is using trench DMOS technology.

tailored to minimize RDS(ON), provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

Advanced DMOS Trench technology.
Suit for -4.5V Gate Drive.

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SPR60P03 p-channel enhancement mode power mosfet by WILLAS - Datasheet Preview

Datasheet Details

Part number	SPR60P03
Manufacturer	WILLAS
File Size	2.49 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	SPR60P03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET SPR60P03 PRIMARY CHARACTERISTICS BVDSS -30V RDS(ON) 8.5mΩ ID -60A TJ,Max 150℃ FEATURES  Advanced DMOS Trench technology  Suit for -4.5V Gate Drive Application  Green Device Available  Fast switching  100% EAS Guaranteed PR-PAK PACKAGE Date Code ŕũŦġŧŪųŴŵġŤŰťŦġĻ 4 5 7KHVHFRQGFRGH 0RQWK=ABCD ABCDEFGHIJK L 1 2 3 4 5 6 7 8 X 9 10 11 7KHWKLUGFRGH 3URGXFWLRQ7SH1R 01-99 7KHIRXUWKFRGH 3URGXFWLRQ7SH1R 01-99 ([ 4A01=20141013URGXFH M 12 MECHANICAL DATA  Case：Molded plastic,PR-PAK  Polarity：Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant DESCRIPTION  The SPR60P03 is using trench DMOS technology.