SPR90P03 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The SPR90P03 is using trench DMOS technology.

energy pulse in the avalanche and commutation mode.

Features

Advanced DMOS Trench technology.
Suit for -4.5V Gate Drive.

WILLAS

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Datasheet Details

Part number	SPR90P03
Manufacturer	WILLAS
File Size	1.08 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	SPR90P03 Datasheet
Additional preview pages of the SPR90P03 datasheet.

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Full PDF Text Transcription

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P -Channel Enhancement Mode Power MOSFET SPR90P03 PRIMARY CHARACTERISTICS BVDSS -30V RDS(ON) 4.5mΩ PR-PAK PACKAGE ID TJ,Max -90A 150℃ FEATURES  Advanced DMOS Trench technology  Suit for -4.5V Gate Drive Application  Green Device Available  Fast switching  100% EAS Guaranteed Date Code ŕũŦġŧŪųŴŵġŤŰťŦġĻ 4 5 7KHVHFRQGFRGH 0RQWK=ABCD ABCDEFGHIJK L 1 2 3 4 5 6 7 8 X 9 10 11 7KHWKLUGFRGH 3URGXFWLRQ7SH1R 01-99 7KHIRXUWKFRGH 3URGXFWLRQ7SH1R 01-99 ([ 4A01=20141013URGXFH M 12 MECHANICAL DATA  Case：Molded plastic,PR-PAK  Polarity：Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant DESCRIPTION  The SPR90P03 is using trench DMOS technology.

Published: Feb 25, 2020 |