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SE2305GD - P-Channel High Density Trench MOSFET

Description

The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • Moisture Sensitivity Level 1 G S.

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Datasheet Details

Part number SE2305GD
Manufacturer WILLAS
File Size 919.04 KB
Description P-Channel High Density Trench MOSFET
Datasheet download datasheet SE2305GD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23 Marking :A5S- HB A5 S- HB PACKAGE D S G D FEATURES  High power and current handing capability  Lead free product is acquired  Surface mount package  Moisture Sensitivity Level 1 G S MECHANICAL DATA  Case：Molded plastic,SOT-23  Polarity：Shown above  Terminals :Plated terminals, solderable per MIL-STD-750,Method 2026  Epoxy : UL94-V0 rated flame retardant DESCRIPTION The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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