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SWITCHING DIODE
RoHS
BAL99LT1
Features
Power dissipation PD : 350 mW (Tamb=25 C)
Pluse Drain
DIF : 100 mA TReverse Voltage
VR : 70V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.COLLECTOR
COANODE-CATHODE 3 IC1 2 ANODE CATHODE
Marking:JF
2.9 1.9 0.95 0.95 0.4
Unit:mm
ONElectro-Optical Characteristics
RParameter
Symbol
TReverse breakdown voltage
V(BR)
CReverse Voltage leakage current
IR
EForward Voltage ELDiode Capacitance WEJReverse Recovery Time
VF
CD trr
Test Condition
IR=100 A
VR=70V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V f=1MHz
(Ta=25 C)
MIN. MAX. Unit
70 V
2.5
715 855 1000 1250 1.5
A mV pF
6 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.
BAL99LT1 Datasheet
