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Si8800EDB - N-Channel 20 V (D-S) MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Ultra Small 0.8 mm x 0.8 mm Outline.
  • Ultra Thin 0.357 mm Height.
  • Typical ESD Protection 1500 V.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number Si8800EDB
Manufacturer Vishay
File Size 164.35 KB
Description N-Channel 20 V (D-S) MOSFET
Datasheet download datasheet Si8800EDB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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New Product www.DataSheet4U.com Si8800EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = 4.5 V 20 0.090 at VGS = 2.5 V 0.105 at VGS = 1.8 V 0.150 at VGS = 1.5 V ID (A)a 2.8 2.6 2.4 2.0 3.2 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small 0.8 mm x 0.8 mm Outline • Ultra Thin 0.
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