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Vishay Intertechnology Electronic Components Datasheet

Si4565DY Datasheet

N- and P-Channel 40-V (D-S) MOSFET

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New Product
Si4565DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
40
40
rDS(on) (W)
0.040 @ VGS = 10 V
0.045 @ VGS = 4.5 V
0.054 @ VGS = 10 V
0.072 @ VGS = 4.5 V
ID (A)
5.2
4.9
4.5
3.9
Qg (Typ)
8
9
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D UIS Tested
APPLICATIONS
D CCFL Inverter
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipatioa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
10 secs Steady State 10 secs Steady State
40 40
"12
5.2 3.9
4.5
"16
3.3
4.2
3.1
3.6
2.7
30
1.7
0.9
1.7
0.9
13 16
8.5 13
2.0 1.1 2 1.1
1.3 0.7 1.3 0.7
55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
Symbol
RthJA
RthJF
N-Channel
Typ
52
90
32
Max
62.5
110
40
P-Channel
Typ
50
85
30
Max
62.5
110
40
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si4565DY Datasheet

N- and P-Channel 40-V (D-S) MOSFET

No Preview Available !

Si4565DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
DVDS/Tj
DVGS(th)/Tj
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 0 V, VGS = "16 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55_C
VDS = 40 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS p 5 V, VGS = 10 V
VGS = 10 V, ID = 5.2 A
VGS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 4.9 A
VGS = 4.5 V, ID = 3.9 A
VDS = 15 V, ID = 5.2 A
VDS = 15 V, ID = 4.5 A
IS = 1.7 A, VGS = 0 V
IS = 1.7 A, VGS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
Qgs P-Channel
VDS = 20 V, VGS = 4.5 V, ID = 4.5 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Source-Drain
Reverse Recovery Time
Body Diode
Reverse Recovery Charge
tf
trr
Qrr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
P-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.7 A, di/dt = 100 A/ms
IF = 1.7 A, di/dt = 100 A/ms
IF = 1.7 A, di/dt = 100 A/ms
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
0.8
20
20
40
40
3.8
3.4
0.033
0.045
0.037
0.059
18
13
0.75
0.79
1.6
2.2
V
mV/_C
"100
"100
1
1
10
10
0.040
0.054
0.045
0.072
1.2
1.2
nA
mA
A
W
S
V
N-Ch
700
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
805
76
120
45
85
pF
N-Ch
8 12
P-Ch
9 14
N-Ch
P-Ch
1.5
2
nC
N-Ch
2.4
P-Ch
3.6
N-Ch
0.9
1.9
2.9
P-Ch
5
11.5 18
W
N-Ch
7 11
P-Ch
8 13
N-Ch
11 17
P-Ch
N-Ch
12
27
18
40
ns
P-Ch
74 110
N-Ch
8 13
P-Ch
38 60
N-Ch
P-Ch
25
27
40
45
ns
N-Ch
P-Ch
17
17
26
26
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73224
S-50033—Rev. A, 17-Jan-05


Part Number Si4565DY
Description N- and P-Channel 40-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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