900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

Si1031X Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

P-Channel 20 V (D-S) MOSFET
Si1031R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
8 at VGS = - 4.5 V
12 at VGS = - 2.5 V
- 20
15 at VGS = - 1.8 V
20 at VGS = - 1.5 V
ID (mA)
- 150
- 125
- 100
- 30
SC-75A or SC-89
G1
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X
3D
S2
Marking Code: H
Top View
Ordering Information:
Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• High-Side Switching
• Low On-Resistance: 8
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 45 ns
• TrenchFET® Power MOSFETs: 1.5 V Rated
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1031R
Si1031X
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS ± 6
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currenta
TA = 25 °C
TA = 85 °C
ID
IDM
- 150
- 140
- 110
- 100
- 500
- 165
- 155
- 150
- 125
- 600
Continuous Source Current (Diode Conduction)a
IS - 250 - 200 - 340 - 240
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
340
170
300
150
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
Unit
V
mA
mW
°C
V
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si1031X Datasheet

P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1031R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea RDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 2.8 V
VDS = 0 V, VGS = ± 4.5 V
VDS = - 16 V, VGS = 0 V
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 150 mA
VGS = - 2.5 V, ID = - 125 mA
VGS = - 1.8 V, ID = - 100 mA
VGS = - 1.5 V, ID = - 30 mA
VDS = - 10 V, ID = 150 mA
IS = - 150 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA
VDD = - 10 V, RL = 65
ID - 150 mA, VGEN = - 4.5 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 0.40
- 200
Typ.a
± 0.5
± 1.0
-1
0.4
1500
150
450
Max.
- 1.2
± 1.0
± 2.0
- 500
- 10
8
12
15
20
- 1.2
55
30
60
30
Unit
V
µA
nA
µA
mA
S
V
pC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5
VGS = 5 V thru 2.5 V
0.4
500
2V
400
1.8 V
0.3 300
TJ = - 55 °C
25 °C
125 °C
0.2 200
0.1 100
0.0
0
12345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10


Part Number Si1031X
Description P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
PDF Download

Si1031X Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 Si1031 10-Bit ADC MCU
Silicon Laboratories
2 SI1031R P-Channel 20-V (D-S) MOSFET
Vishay Siliconix
3 Si1031X P-Channel 20-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy