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Vishay Intertechnology Electronic Components Datasheet

SI1032R Datasheet

N-Channel 20-V (D-S) MOSFET

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N-Channel 1.5 V (G-S) MOSFET
Si1032R/X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
5 at VGS = 4.5 V
7 at VGS = 2.5 V
20
9 at VGS = 1.8 V
10 at VGS = 1.5 V
ID (mA)
200
175
150
50
SC-75A or SC-89
G1
3D
S2
Top View
Marking Code: G
Ordering Information:
Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low-Side Switching
• Low On-Resistance: 5
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns
• TrenchFET® Power MOSFETs: 1.5 V Rated
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Si1032R
Si1032X
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ± 6
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currenta
TA = 25 °C
TA = 85 °C
ID
IDM
200 140
110 100
500
210 200
150 140
600
Continuous Source Current (Diode Conduction)a
IS 250 200 300 240
Maximum Power Dissipationa for SC-75
TA = 25 °C
TA = 85 °C
PD
280
145
250
130
340
170
300
150
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
Notes:
a. Surface mounted on FR4 board.
Unit
V
mA
mW
°C
V
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1032R Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si1032R/X
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea RDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 2.8 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 200 mA
VGS = 2.5 V, ID = 175 mA
VGS = 1.8 V, ID = 150 mA
VGS = 1.5 V, ID = 40 mA
VDS = 10 V, ID = 200 mA
IS = 150 mA, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
VDD = 10 V, RL = 47
ID 200 mA, VGEN = 4.5 V, Rg = 10
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.40
250
Typ.
0.7
± 0.5
± 1.0
Max.
1.2
± 1.0
± 3.0
1
10
5
7
9
10
0.5
1.2
750
75
225
50
25
50
25
Unit
V
µA
mA
S
V
pC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.5 600
VGS = 5 V thru 1.8 V
500
0.4
400
0.3
300
0.2
200
TJ = - 55 °C
25 °C
125 °C
0.1
0.0
0
1V
12345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
100
0
0.0
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.5
www.vishay.com
2
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10


Part Number SI1032R
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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