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SUD50N02-06P - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized for High Efficiency.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

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SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0060 at VGS = 10 V 0.0095 at VGS = 4.
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