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Vishay Intertechnology Electronic Components Datasheet

SI4925BDY Datasheet

Dual P-Channel 30-V (D-S) MOSFET

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Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.025 @ VGS = - 10 V
- 30
0.041 @ VGS = - 4.5 V
ID (A)
- 7.1
- 5.5
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4925BDY
Si4925BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 30
"20
- 7.1 - 5.3
- 5.7 - 4.3
- 40
- 1.7 - 0.9
2.0 1.1
1.3 0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72001
S-31989—Rev. B, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4925BDY Datasheet

Dual P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4925BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55_C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 7.1 A
VGS = - 4.5 V, ID = - 5.5 A
VDS = - 10 V, ID = - 7.1 A
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 10 V, ID = - 7.1 A
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = - 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
-1 -3 V
"100
nA
-1
- 25 mA
- 40 A
0.020
0.033
0.025
0.041
W
20 S
- 0.8 - 1.2
V
33 50
5.4 nC
8.9
9 15
12 20
60 90 ns
34 50
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 10 thru 5 V
30
4V
20
40
30
20
Transfer Characteristics
TC = - 55_C
25_C
125_C
10
0
0
3, 2 V
1234
VDS - Drain-to-Source Voltage (V)
5
10
0
012345
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72001
S-31989—Rev. B, 13-Oct-03


Part Number SI4925BDY
Description Dual P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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