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Vishay Intertechnology Electronic Components Datasheet

SI4922DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Si4922DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.016 @ VGS = 10 V
0.018 @ VGS = 4.5 V
0.024 @ VGS = 2.5 V
ID (A)
8.8
8.3
7.2
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1 D1
D2 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
8.8 6.7
7.1 5.3
"30
1.7 0.9
2.0 1.1
1.3 0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71309
S-20112—Rev. B, 11-Mar-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4922DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4922DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 8.8 A
VGS = 4.5 V, ID = 8.3 A
VGS = 2.5 V, ID = 7.2 A
VDS = 15 V, ID = 8.8 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 8.8 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.60
30
"100
1
5
0.013
0.015
0.020
30
0.8
0.016
0.018
0.024
1.2
V
nA
mA
A
W
S
V
22 33
5.8 nC
5.8
12 24
10 20
75 150 ns
26 50
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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Output Characteristics
VGS = 10 thru 3 V
2V
1V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
30
24
18
12
6
0
0.0
TC = 125_C
25_C
55_
C
0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
3.0
Document Number: 71309
S-20112Rev. B, 11-Mar-02


Part Number SI4922DY
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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