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Vishay Intertechnology Electronic Components Datasheet

SI4850EY Datasheet

N-Channel Reduced Qg / Fast Switching MOSFET

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Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 10 V
60
0.031 at VGS = 4.5 V
ID (A)
8.5
7.2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free)
Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
± 20
Continuous Drain Current (TJ = 175 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
IDM
8.5 6.0
7.1 5.0
40
Avalanche Current
IAS 15
Single Pulse Avalanche Energy
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
EAS
PD
11
3.3 1.7
2.3 1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4850EY Datasheet

N-Channel Reduced Qg / Fast Switching MOSFET

No Preview Available !

Si4850EY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
VDS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6.0 A
VGS = 10 V, ID = 6.0 A, TJ = 125 °C
VGS = 10 V, ID = 6.0 A, TJ = 175 °C
Forward Transconductancea
VGS = 4.5 V, ID = 5.1 A
gfs VDS = 15 V, ID = 6.0 A
Diode Forward Voltagea
VSD IS = 1.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 30 V, VGS = 10 V, ID = 6.0 A
VGS = 0.1 V, f = 5 MHz
VDD = 30 V, RL = 30 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
60
1
40
0.5
Typ.
Max.
3
± 100
1
20
0.018
0.031
0.039
0.025
25
0.8
0.022
0.037
0.047
0.031
1.2
18 27
3.4
5.3
1.4 2.4
10 20
10 20
25 50
12 24
50 80
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 40
VGS = 10 V thru 5 V
32
32
24 24
4V
16 16
8
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
www.vishay.com
2
8
0
0
TC = 150 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
Document Number: 71146
S09-1341-Rev. F, 13-Jul-09


Part Number SI4850EY
Description N-Channel Reduced Qg / Fast Switching MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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