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Vishay Intertechnology Electronic Components Datasheet

SI4828DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Si4828DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.0135 @ VGS = 10 V
0.0175 @ VGS = 4.5 V
ID (A)
7.5
6.5
9.8
8.5
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1 D1
D2 D2
G1
S1
N-Channel 1
MOSFET
G2
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
7.5
6
1.8
2
1.78
30
"20
5.8 9.8
4.6 7.8
30
1.06
1.8
1.17
2
0.75
1.28
–55 to 150
7.5
6
40
1.06
1.17
0.75
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 10 sec
Steady-State
RthJA
Maximum Junction-to-Foot (Drain)
Steady-State
RthJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71181
S-00983—Rev. A, 15-May-00
Channel-1
Typ Max
55 62.5
89 107
36 45
Channel-2
Typ Max
53 62.5
89 107
34 42
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

SI4828DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4828DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 9.8 A
VGS = 4.5 V, ID = 6.5 A
VGS = 4.5 V, ID = 8.5 A
VDS = 15 V, ID = 7.5 A
VDS = 15 V, ID = 9.8 A
IS = 1.8 A, VGS = 0 V
IS = 1.8 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
1.0
20
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Channel-1
VDS = 15 V, VGS = 5 V, ID = 7.5 A
Channel-2
VDS = 15 V, VGS = 5 V, ID = –9.8 A
Channel-1
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.8 A, di/dt = 100 A/ms
IF = 1.8 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ Max Unit
100
100
1
1
15
15
0.018
0.011
0.024
0.0145
17
30
0.72
0.72
0.022
0.0135
0.030
0.0175
1.1
1.1
V
nA
mA
A
W
S
V
8.0 12
23 34
1.75
8.6
nC
3.2
7.2
10 20
17 30
5 10
10 20
26 50
ns
60 100
10 16
17 30
30 60
40 70
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 71181
S-00983—Rev. A, 15-May-00


Part Number SI4828DY
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 8 Pages
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