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SI4812DY Datasheet

N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V
0.028 @ VGS = 4.5 V
ID (A)
9
7.3
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% Rg Tested
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
SO-8
IF (A)
1.4
D
S1
S2
S3
G4
Top View
8D
7D
6D
5D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
Symbol
VDS
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
10 sec
Steady State
30
30
"20
9 6.9
7.5 5.6
50
2.1 1.2
1.4 0.8
30
2.5 1.4
1.6 0.9
2.0 1.2
1.3 0.8
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
MOSFET
Schottky
MOSFET
Schottky
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
Typical
40
50
72
85
Maximum
50
60
90
100
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4812DY Datasheet

N-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
IDSS
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Schottky Diode Forward Voltagea
ID(on)
rDS(on)
gfs
VSD
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100_C
VDS = 30 V, VGS = 0 V, TJ = 125_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 9 A
VGS = 4.5 V, ID = 7.3 A
VDS = 15 V, ID = 9 A
IS = 1.0 A, VGS = 0 V
IS = 1.0 A, VGS = 0 V, TJ = 125_C
VDS = 15 V, VGS = 5 V, ID = 9 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 1.0 A, di/dt = 100 A/ms
13
"100
0.004
0.100
0.7 10
3.0 20
20
0.012
0.018
0.019
0.028
23
0.45
0.33
0.50
0.42
13 24
4
5.7
0.2 2.4
16 25
10 20
35 50
13 20
35 70
Unit
V
nA
mA
A
W
S
V
nC
W
ns
www.vishay.com
2
Document Number: 71775
S-41426—Rev. G, 26-Jul-04


Part Number SI4812DY
Description N-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 5 Pages
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