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Vishay Intertechnology Electronic Components Datasheet

SI4807DY Datasheet

P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET

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Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Gate 1
Gate 2
–30
rDS(ON) (W)
0.035 @ VGS = –10 V
0.054 @ VGS = –4.5 V
1.3 @ VGS = –10 V
2.2 @ VGS = –4.5 V
ID (A)
"6
"4.8
"0.9
"0.7
D
G2 1
G1 2
S3
S4
SO-8
Top View
8 NC
7D
6D
5D
G2
G1
S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Gate 1
Gate 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"20
"6 "0.9
"4.8
"0.7
"30
"1.5
–1.25
2.3
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Symbol
RthJA
Limit
55
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4807DY Datasheet

P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET

No Preview Available !

Si4807DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS1(on)
rDS2(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V, TJ = 55_C
(G1 = G2) VDS = –5 V, VGS = –10 V
(G1 = G2) VGS = –10 V, ID = –6 A
(G1 = G2) VGS = –4.5 V, ID = –4.8 A
VG1S = 0 V, VG2S = –10 V, ID = –0.15 A
VG1S = 0 V, VG2S = –4.5 V, ID = –0.1 A
VDS = –15 V, ID = –6 A
IS = –1.25 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Gate 1
VDS = –15 V, VGS(1, 2) = –10 V
ID = –6 A
Gate 2
VDS = –15 V, VGS(1) = –0 V
VGS(2) = –10 V, ID = –0.15 A
Gate 1
Gate 2
Gate 1
Gate 2
Gate 1
Gate 2
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –1.25 A, di/dt = –100 A/ms
Min
–1
–20
Typ Max Unit
"100
–1
–5
0.028
0.041
1.05
1.65
13
0.7
0.035
0.054
1.3
2.2
–1.1
V
nA
mA
A
W
S
V
34 60
2.0 5
6.5
nC
0.5
6.0
0.2
15 25
11 20
52 80 ns
20 35
30 60
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70643
S-00652—Rev. E, 27-Mar-00


Part Number SI4807DY
Description P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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