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Vishay Intertechnology Electronic Components Datasheet

SI4804BDY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Dual N-Channel 30 V (D-S) MOSFET
Si4804BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.022 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A)
7.5
6.5
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Symmetrical Buck-Boost DC/DC Converter
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
G1
D2
G2
Top View
Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free)
Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
7.5 5.7
6.0 4.6
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.9
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typ.
52
93
35
Limits
Max.
62.5
110
40
Unit
°C/W
Document Number: 72061
S10-0461-Rev. G, 22-Feb-10
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4804BDY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4804BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
Forward Transconductanceb
gfs VDS = 15 V, ID = 7.5 A
Diode Forward Voltageb
VSD IS = 1 A, VGS = 0 V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Min.
0.8
20
Typ.a
Max.
3.0
± 100
1
15
0.017
0.024
19
0.75
0.022
0.030
1.2
Unit
V
nA
µA
A
Ω
S
V
7 11
2.9 nC
2.5
0.5 1.5 2.6
Ω
9 15
10 17
19 30 ns
9 15
35 55
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72061
S10-0461-Rev. G, 22-Feb-10


Part Number SI4804BDY
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 6 Pages
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