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Vishay Intertechnology Electronic Components Datasheet

SI4486EY Datasheet

N-Channel 100-V (D-S) MOSFET

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Si4486EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.025 @ VGS = 10 V
0.028 @ VGS = 6.0 V
ID (A)
7.9
7.5
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4486EY
Si4486EY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IAR
EAR
IS
PD
TJ, Tstg
100
"20
7.9 5.4
6.1 4.2
40
30
45
3.1 1.5
3.8 1.8
2.3 1.1
- 55 to 175
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71234
S-03951—Rev. B, 26-May-03
Symbol
RthJA
RthJF
Typical
33
70
17
Maximum
40
85
21
Unit
_C/W
www.vishay.com
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4486EY Datasheet

N-Channel 100-V (D-S) MOSFET

No Preview Available !

Si4486EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 7.9 A
VGS = 6.0 V, ID = 7.5 A
VDS = 15 V, ID = 7.9 A
IS = 3.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 10 V, ID = 7.9 A
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 3.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2V
"100
nA
1
mA
20
40 A
0.021
0.023
35
0.8
0.025
0.028
1.2
W
S
V
36 44
10 nC
8.6
0.5 1.27 2.2
W
20 40
10 20
46 90 ns
26 50
50 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
www.vishay.com
2-2
Output Characteristics
VGS = 10 thru 6 V
5V
4V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
40
32
24
16
8
0
0
TC = 150_C
25_C
- 55_C
12345
VGS - Gate-to-Source Voltage (V)
6
Document Number: 71234
S-03951—Rev. B, 26-May-03


Part Number SI4486EY
Description N-Channel 100-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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