900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI4480EY Datasheet

N-Channel 80-V (D-S) MOSFET

No Preview Available !

N-Channel 80-V (D-S) MOSFET
Si4480EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.035 @ VGS = 10 V
80
0.040 @ VGS = 6.0 V
ID (A)
6.2
5.8
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4480EY
Si4480EY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
80
"20
6.2
5.2
40
2.5
3
2.1
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. t v 10 sec.
Document Number: 71060
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJL
Typical
40
85
20
Maximum
50
100
24
Unit
_C/W
www.vishay.com
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4480EY Datasheet

N-Channel 80-V (D-S) MOSFET

No Preview Available !

Si4480EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currena
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.2 A
VGS = 6.0 V, ID = 5.8 A
VDS = 15 V, ID = 6.2 A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 40 V, VGS = 10 V, ID = 6.2 A
VDD = 40 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typb Max Unit
2V
"100
nA
1
mA
20
20 A
0.026
0.030
0.035
0.040
W
25 S
1.2 V
30 50
9 nC
5.6
1.5 4.0 W
12.5
25
12.5
25
52 80 ns
22 40
50 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 10 thru 6 V
32
24 5 V
16
8
0
0.0
www.vishay.com
2-2
4V
0.8 1.6 2.4 3.2
VDS - Drain-to-Source Voltage (V)
4.0
Transfer Characteristics
40
32
24
16
8
0
0
TC = 125_C
25_C
- 55_C
12345
VGS - Gate-to-Source Voltage (V)
6
Document Number: 71060
S-03951—Rev. B, 26-May-03


Part Number SI4480EY
Description N-Channel 80-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI4480EY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI4480EY N-Channel 80-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy