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Vishay Intertechnology Electronic Components Datasheet

SI4453DY Datasheet

P-Channel 12-V (D-S) MOSFET

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P-Channel 12-V (D-S) MOSFET
Si4453DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0065 @ VGS = - 4.5 V
- 12 0.00775 @ VGS = - 2.5 V
0.01025 @ VGS = - 1.8 V
ID (A)
- 14
- 13
- 12
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D Battery Switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4453DY
Si4453DY-T1 (with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 12
"8
- 14 - 10
- 11.5
-8
- 50
- 2.7 - 1.36
3.0 1.5
1.9 0.95
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72175
S-03849—Rev. A, 28-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4453DY Datasheet

P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si4453DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 600 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 14 A
VGS = - 2.5 V, ID = - 13 A
VGS = - 1.8 V, ID = - 12 A
VDS = - 6 V, ID = - 14 A
IS = - 2.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 6 V, VGS = - 5 V, ID = - 14 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.4 - 0.9 V
"100
nA
-1
mA
- 10
- 30 A
0.0051 0.0065
0.0062 0.00775
W
0.0082 0.01025
80 S
- 0.6 - 1.1
V
110 165
15 nC
27.5
110 170
235 350
ns
410 620
285 430
3.6 W
180 270 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 5 thru 2 V
40
30
1.5 V
20
10
0
0
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2
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
TC = 125_C
10
0
0.00
25_C
- 55_C
0.25 0.50 0.75 1.00 1.25 1.50
VGS - Gate-to-Source Voltage (V)
1.75
Document Number: 72175
S-03849—Rev. A, 28-Apr-03


Part Number SI4453DY
Description P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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