900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI4427DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

New Product
P-Channel 30-V (D-S) MOSFET
Si4427DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0105 @ VGS = –10 V
–30 0.0125 @ VGS = –4.5 V
0.0195 @ VGS = –2.5 V
ID (A)
–13.3
–12.2
–9.8
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS –30
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
–13.3
–9.4
–10.7
–7.5
–50
–2.5
–1.3
3.0 1.5
1.9 0.9
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4427DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4427DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = –24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V, TJ = 55_C
VDS v –5 V, VGS = –10 V
VGS = –10 V, ID = –13.3 A
VGS = –4.5 V, ID = –12.2 A
VGS = –2.5 V, ID = –9.8 A
VDS = –15 V, ID = –13.3 A
IS = –2.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –15 V, VGS = –4.5 V, ID = –13.3 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –2.5 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.60
–50
"100
–1
–5
0.0086
0.0105
0.0165
40
–0.8
0.0105
0.0125
0.0195
–1.2
V
nA
mA
A
W
S
V
47 70
20 nC
8.3
16 25
12 20
220 330 ns
70 110
50 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 3 V
40
30
20
10 2 V
0
0
www.vishay.com
2
1234
VDS – Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
10
0
0
TC = 125_C
25_C
–55_C
0.5 1.0 1.5 2.0 2.5
VGS – Gate-to-Source Voltage (V)
3.0
Document Number: 71308
S-01828—Rev. A, 21-Aug-00


Part Number SI4427DY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
PDF Download

SI4427DY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI4427DY P-Channel 30-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy