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PD - 93835
Si4420DY
l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive
S S S G
Description
This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET
AA 1 8D 2 7D 3 6D 4 5D
Top View
VDSS = 30V RDS(on) = 0.
Si4420DY Datasheet
