Si4420DY mosfet equivalent, power mosfet.
l: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000
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The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater t.
This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven po.
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