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Vishay Intertechnology Electronic Components Datasheet

SI4410BDY Datasheet

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET
Si4410BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0135 @ VGS = 10 V
0.020 @ VGS = 4.5 V
ID (A)
10
8
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4410BDY
Si4410BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D Battery Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
10 7.5
86
50
2.3 1.26
2.5 1.4
1.6 0.9
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
25
Maximum
50
90
30
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI4410BDY Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4410BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgt
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 10 A
VDS = 15 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 25 V, RL = 25 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0 3.0 V
"100
1
5
nA
mA
20 A
0.011
0.0165
25
0.76
0.0135
0.020
1.1
W
S
V
13 20
25 40
nC
5.5
3.7
0.5 1.6 2.7 W
10 15
10 15
40 60 ns
15 25
35 70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 5 V
40
30
4V
20
10
0
0.0
2V 3V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V)
4.0
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2
50
40
30
20
10
0
0
Transfer Characteristics
TC = 125_C
25_C
- 55_C
1234
VGS - Gate-to-Source Voltage (V)
5
Document Number: 72211
S-31990—Rev. B, 13-Oct-03


Part Number SI4410BDY
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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