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NXP Semiconductors Electronic Components Datasheet

SI4410DY Datasheet

N-channel enhancement mode field-effect transistor

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Si4410DY
N-channel enhancement mode field-effect transistor
M3D315 Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4410DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertors
s DC motor control
s Lithium ion battery applications
c
c s Notebook PC
s Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
85
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

SI4410DY Datasheet

N-channel enhancement mode field-effect transistor

No Preview Available !

Philips Semiconductors
Si4410DY
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tamb = 25 °C; pulsed; tp 10 s
Tamb = 25 °C; pulsed; tp 10 s
VGS = 10 V; ID = 10 A; Tj = 25 °C
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
Typ
11
15
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tj = 25 to 150 °C
Tamb = 25 °C; pulsed; tp 10 s; Figure 2 and 3
Tamb = 70 °C; pulsed; tp 10 s; Figure 2
Tamb = 25 °C; pulsed; tp 10 µs; Figure 3
Tamb = 25 °C; pulsed; tp 10 s; Figure 1
Tamb = 70 °C; pulsed; tp 10 s; Figure 1
IS
source (diode forward) current
Tamb = 25 °C; pulsed; tp 10 s
Min
55
55
Max Unit
30 V
10 A
2.5 W
150 °C
13.5 m
20 m
Max
30
±20
10
8
50
2.5
1.6
+150
+150
Unit
V
V
A
A
A
W
W
°C
°C
2.3 A
9397 750 08048
Product data
Rev. 02 — 05 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 13


Part Number SI4410DY
Description N-channel enhancement mode field-effect transistor
Maker NXP
Total Page 13 Pages
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