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Vishay Intertechnology Electronic Components Datasheet

SI4392DY Datasheet

N-Channel Reduced Qg/ Fast Switching WFET

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Si4392DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching WFETt
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00975 @ VGS = 10 V
0.01375 @ VGS = 4.5 V
ID (A)
12.5
10.0
FEATURES
D Extremely Low Qgd WFET Technology for
Switching Losses
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D High-Side DC/DC Conversion
Notebook
Server
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
Ordering Information:
Si4392DY
Si4392DY-T1 (with Tape and Reel)
Si4392DY—E3 (Lead (Pb)-Free)
Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
12.5
10
50
2.7
3.0
1.9
55 to 150
Unit
A
W
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
RthJA
RthJF
Typical
33
16
Maximum
42
20
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4392DY Datasheet

N-Channel Reduced Qg/ Fast Switching WFET

No Preview Available !

Si4392DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 12.5 A
VGS = 4.5 V, ID = 10.0 A
VDS = 15 V, ID = 12.5 A
IS = 2.7 A, VGS = 0 V
VDS = 15 V, VGS = 4.5 V, ID = 12.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 2.7 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0 3.0 V
"100
1
5
nA
mA
30 A
0.008
0.011
40
0.73
0.00975
0.01375
1.1
W
S
V
10 15
3.5 nC
2.6
0.5 1.6 2.7 W
15 25
5 10
45 70 ns
8 15
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 4 V
40
30
20 3 V
10
0
0
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2
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
10
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS Gate-to-Source Voltage (V)
4.0
Document Number: 72151
S-41427—Rev. D, 26-Jul-04


Part Number SI4392DY
Description N-Channel Reduced Qg/ Fast Switching WFET
Maker Vishay Siliconix
Total Page 5 Pages
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