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Vishay Intertechnology Electronic Components Datasheet

SI3900DV Datasheet

Dual N-Channel 20-V (D-S) MOSFET

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Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.125 @ VGS = 4.5 V
0.200 @ VGS = 2.5 V
ID (A)
2.4
1.8
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
D1
S1
D2
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
2.4 2.0
1.7 1.4
8
1.05
0.75
1.15
0.83
0.59
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71178
S-03511—Rev. B, 16-Apr-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3900DV Datasheet

Dual N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si3900DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.4 A
VGS = 2.5 V, ID = 1.0 A
VDS = 5 V, ID = 2.4 A
IS = 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 2.4 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 3.0 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 V
"100
nA
1
mA
10
5A
0.100
0.160
0.125
0.200
W
5
0.79
1.10
S
V
2.1 4.0
0.3 nC
0.4
10 17
30 50
14 25 ns
6 12
30 50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 4.5 thru 3.5 V
8 3V
6
2.5 V
4
2
0
0
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2
2V
1.5 V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
10
TC = 55_C
8
25_C
6
125_C
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS Gate-to-Source Voltage (V)
Document Number: 71178
S-03511Rev. B, 16-Apr-01


Part Number SI3900DV
Description Dual N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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