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Vishay Intertechnology Electronic Components Datasheet

SI3850DV Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.500 @ VGS = 4.5 V
0.750 @ VGS = 3.0 V
1.00 @ VGS = –4.5 V
1.30 @ VGS = –3.0 V
TSOP-6
Top View
G1 1 6
D 25
G2 3 4
S1
D
S2
ID (A)
"1.2
"1.0
"0.85
"0.75
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 –20
"12
"12
"1.2
"0.85
"0.95
"0.65
"3.5
"2.5
1 –1
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
Symbol
RthJA
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
N- or P- Channel
100
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI3850DV Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

No Preview Available !

Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = –20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 0.5 A
VGS = –4.5 V, ID = –0.5 A
VGS = 3.0 V, ID = 0.5 A
VGS = –3.0 V, ID = –0.5 A
VDS = 10 V, ID = 1.2 A
VDS = –10 V, ID = –0.85 A
IS = 1 A, VGS = 0 V
IS = –1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.2 A
Qgs P-Channel
VDS = –10 V, VGS = –4.5 V
Qgd ID = –0.85 A
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = 1 A, di/dt = 100 A/ms
IF = –1 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
0.6
–0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.0
–2.0
0.38
0.70
0.55
1.10
2.7
1.2
"100
1
–1
10
–10
0.500
1.00
0.750
1.30
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8 2.0
1.10
2.5
0.25
0.50
nC
0.2
0.2
10 20
8 15
20 40
20 40
20 40
ns
10 20
16 30
8 15
40 80
40 80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70778
S-55457—Rev. B, 09-Mar-98


Part Number SI3850DV
Description Complementary MOSFET Half-Bridge (N- and P-Channel)
Maker Vishay Siliconix
Total Page 6 Pages
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