Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = –20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = –20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 0.5 A
VGS = –4.5 V, ID = –0.5 A
VGS = 3.0 V, ID = 0.5 A
VGS = –3.0 V, ID = –0.5 A
VDS = 10 V, ID = 1.2 A
VDS = –10 V, ID = –0.85 A
IS = 1 A, VGS = 0 V
IS = –1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.2 A
Qgs P-Channel
VDS = –10 V, VGS = –4.5 V
Qgd ID = –0.85 A
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = 1 A, di/dt = 100 A/ms
IF = –1 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
0.6
–0.6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.0
–2.0
0.38
0.70
0.55
1.10
2.7
1.2
"100
1
–1
10
–10
0.500
1.00
0.750
1.30
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8 2.0
1.10
2.5
0.25
0.50
nC
0.2
0.2
10 20
8 15
20 40
20 40
20 40
ns
10 20
16 30
8 15
40 80
40 80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
