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Vishay Intertechnology Electronic Components Datasheet

SI3458DV Datasheet

N-Channel 60-V (D-S) MOSFET

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New Product
N-Channel 60-V (D-S) MOSFET
Si3458DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.10 @ VGS = 10 V
60
0.13 @ VGS = 4.5 V
ID (A)
"3.2
"2.8
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS "60
VGS "20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Single Avalanche Current
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IAS
PD
TJ, Tstg
"3.2
"2.5
"15
"10
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec.
Document Number: 70859
S-61517—Rev. B, 12-Apr-99
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJL
Typical
106
35
Maximum
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI3458DV Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

Si3458DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 3.2 A
VGS = 4.5 V, ID = 2.8 A
VDS = 4.5 V, ID = 3.2 A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Source-Drain Rating Characteristicsb
VDS = 30 V, VGS = 10 V, ID = 3.2 A
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Continuous Current
IS
Pulsed Current
Diode Forward Voltagea
Source-Drain Reverse Recovery Time
ISM
VSD
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
IS = 1.7 A, VGS = 0 V
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
60
V
1
"100
nA
1
mA
50
10 A
0.085
0.110
0.10
0.13
W
8S
8 16
4.0 nC
2.0
10 20
10 20
ns
20 40
10 20
1.7
A
15
1.2 V
50 90 ns
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70859
S-61517—Rev. B, 12-Apr-99


Part Number SI3458DV
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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