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SI3442BDV Datasheet

N-Channel 2.5-V (G-S) MOSFET

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N-Channel 2.5-V (G-S) MOSFET
Si3442BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.057 @ VGS = 4.5 V
20
0.090 @ VGS = 2.5 V
ID (A)
4.2
3.4
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3442BDV-T1—E3
Marking Code:
2Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
4.2
3.4
1.4
1.67
1.07
20
"12
20
55 to 150
3.0
2.4
0.72
0.86
0.55
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Typical
75
120
70
Document Number: 72504
S-40424—Rev. C, 15-Mar-04
Maximum
100
145
85
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI3442BDV Datasheet

N-Channel 2.5-V (G-S) MOSFET

No Preview Available !

Si3442BDV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = 5 V, VGS = 2.5 V
VGS = 4.5 V, ID = 4 A
VGS = 2.5 V, ID = 3.4 A
VDS = 10 V, ID = 4.0 A
IS = 1.6 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 10 V, VGS = 4.5 V, ID = 4.0 A
f = 1 MHz
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 1.6 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.6 1.8 V
"100
nA
1
5 mA
10
4A
0.045
0.070
0.057
0.090
W
11.3
0.75
1.2
S
V
35
0.65
nC
0.95
2.7 W
35 55
50 75
20 30 ns
15 25
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 3.5 V
20
16 3 V
16
12 12
2.5 V
88
Transfer Characteristics
TC = 55_C
25_C
125_C
4
0
0
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2
2V
1.5 V
1234
VDS Drain-to-Source Voltage (V)
5
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS Gate-to-Source Voltage (V)
Document Number: 72504
S-40424—Rev. C, 15-Mar-04


Part Number SI3442BDV
Description N-Channel 2.5-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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