Si3443DV mosfet equivalent, p-channel mosfet.
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V
RDS(ON) = 0.100 Ω @ VGS = -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench tech.
where the larger packages are impractical.
Applications Load switch Battery protection Power management
Features .
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have .
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