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SI2314EDS Datasheet

N-Channel 20-V (D-S) MOSFET

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N-Channel 20-V (D-S) MOSFET
Si2314EDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V
0.040 @ VGS = 2.5 V
0.051 @ VGS = 1.8 V
ID (A)
4.9
4.4
3.9
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2314EDS (C4)*
*Marking Code
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
APPLICATIONS
D LI-lon Battery Protection
3 kW
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Avalanche Currentb
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
L = 0.1 mH
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
4.9
3.9
1.25
0.80
20
"12
15
15
11.25
1.0
–55 to 150
3.77
3.0
0.75
0.48
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI2314EDS Datasheet

N-Channel 20-V (D-S) MOSFET

No Preview Available !

Si2314EDS
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Source-Drain Reverse Recovery Time
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "4.5 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 70_C
VDS w 10 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.0 A
VGS = 2.5 V, ID = 4.5 A
VGS = 1.8 V, ID = 4.0 A
VDS = 15 V, ID = 5.0 A
IS = 1.0 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 5.0 A
VDD = 10 V, RL = 10 W
ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W
IF = 1.0 A, di/dt = 100 A/ms
Limits
Min Typ Max
Unit
20
0.45
15
0.027
0.033
0.042
40
0.8
"1.5
1
75
0.033
0.040
0.051
1.2
V
mA
A
W
S
V
11.0 14.0
1.5
2.1
nC
0.53
1.4
13.5
5.9
13
0.8
2.2
20
9
25
ms
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1200
Gate-Current vs. Gate-Source Voltage
1000
800
600
400
200
0
0 2 4 6 8 10 12
VGS Gate-to-Source Voltage (V)
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2
10,000
1,000
100
Gate Current vs. Gate-Source Voltage
10
1
0.1
0.01
TJ = 150_C
TJ = 25_C
0.001
0.0001
0.1
1 10
VGS Gate-to-Source Voltage (V)
100
Document Number: 71611
S-04683Rev. B, 10-Sep-01


Part Number SI2314EDS
Description N-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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