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Vishay Intertechnology Electronic Components Datasheet

SI1551DL Datasheet

Complementary 20-V (D-S) MOSFET

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Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
-20
rDS(on) (W)
1.9 @ VGS = 4.5 V
3.7 @ VGS = 2.7 V
4.2 @ VGS = 2.5 V
0.995 @ VGS = -4.5 V
1.600 @ VGS = -2.7 V
1.800 @ VGS = -2.5 V
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
ID (A)
0.30
0.22
0.21
-0.44
-0.34
-0.32
Marking Code
RD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 85_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
0.30
0.22
0.25
0.30
0.16
20 -20
"12
0.29
- 0.44
-0.41
0.21
-0.31
-0.30
0.6 -1.0
0.23
-0.25
-0.23
0.27
0.30
0.27
0.14
0.16
0.14
-55 to 150
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71255
S-21374β€”Rev. B, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI1551DL Datasheet

Complementary 20-V (D-S) MOSFET

No Preview Available !

Si1551DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = -250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "12 V
VDS = 16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = -16 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VDS p -5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 0.29 A
VGS = -4.5 V, ID = -0.41 A
VGS = 2.7 V, ID = 0.1 A
VGS = -2.7 V, ID = -0.25 A
VGS = 2.5 V, ID = 0.1 A
VGS = -2.5 V, ID = -0.25 A
VDS = 10 V, ID = 0.29 A
VDS = -10 V, ID = -0.41 A
IS = 0.23 A, VGS = 0 V
IS = -0.23 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.29 A
Qgs
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -0.41 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = -10 V, RL = 20 W
ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W
IF = 0.23 A, di/dt = 100 A/ms
IF = -0.23 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
-0.6
0.6
-1.0
"100
"100
1
-1
5
-5
1.55
0.850
2.8
1.23
3.0
1.4
0.3
0.8
0.8
-0.8
1.9
0.995
3.7
1.600
4.2
1.800
1.2
-1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.72
1.5
0.52
1.8
0.22
0.11
nC
0.13
0.14
23 40
7.5 15
30 60
20 40
10 20
ns
8.5 17
15 30
12 24
20 40
25 40
www.vishay.com
2
Document Number: 71255
S-21374β€”Rev. B, 12-Aug-02


Part Number SI1551DL
Description Complementary 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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