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Vishay Intertechnology Electronic Components Datasheet

SI1501DL Datasheet

Complementary 20-V (D-S) Low-Threshold MOSFET

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Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
VDS (V)
N-Channel
20
P-Channel
20
rDS(on) (W)
2.0 @ VGS = 4.5 V
2.5 @ VGS = 2.5 V
3.8 @ VGS = 4.5 V
5.0 @ VGS = 2.5 V
ID (mA)
250
150
180
100
SOT-363
SC-70 (6-Leads)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Top View
Marking Code
RE XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
PD
TJ, Tstg
20 20
"8 "8
250 180
200 140
500 500
0.20
0.13
55 to 150
Unit
V
mA
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
RthJA
Limit
625 (Total)
Unit
_C/W
Document Number: 71303
S-03840—Rev. B, 21-May-01
www.vishay.com S
1


Vishay Intertechnology Electronic Components Datasheet

SI1501DL Datasheet

Complementary 20-V (D-S) Low-Threshold MOSFET

No Preview Available !

Si1501DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0 V, ID = 10 mA
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 50 mA
VDS = VGS, ID = 50 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS w 2.5 V, VGS = 5.0 V
VDS v 2.5 V, VGS = 5.0 V
VDS w 4.5 V, VGS = 8.0 V
VDS v 4.5 V, VGS = 8.0 V
VGS = 2.5 V, ID = 150 mA
VGS = 2.5 V, ID = 75 mA
VGS = 4.5 V, ID = 250 mA
VGS = 4.5 V, ID = 180 mA
VDS = 2.5 V, ID = 50 mA
VDS = 2.5 V, ID = 50 mA
IS = 50 mA, VGS = 0 V
IS = 50 mA, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 5 V, VGS = 4.5 V, ID = 100 mA
Qgs P-Channel
VDS = 5 V, VGS = 4.5 V, ID = 100 mA
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
N-Channel
VDS = 5 V, VGS = 0 V
P-Channel
VDS = 5 V, VGS = 0 V
td(on)
tr
td(off)
tf
N-Channel
VDD = 3 V, RL = 100 W
ID = 0.25 A, VGEN = 4.5 V, Rg = 10 W
P-Channel
ID
=
-0.V2D5DA=, VG3EVN,
R= L=4.510V0,
W
Rg
=
10
W
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com
2
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
20
0.4
0.4
120
120
400
400
24
24
0.9
0.9
"2
"2
0.001
0.001
1.5
1.5
"100
"100
100
100
1
1
1.6
4
1.2
2.6
150
200
0.7
0.7
2.5
5
2.0
3.8
1.2
1.2
V
nA
mA
mA
W
mS
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
300 450
300 450
25
25 pC
100
100
15
15
11
11 pF
5
5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7 12
7 12
25 35
25 35
19 30 ns
19 30
9 15
9 15
Document Number: 71303
S-03840—Rev. B, 21-May-01


Part Number SI1501DL
Description Complementary 20-V (D-S) Low-Threshold MOSFET
Maker Vishay Siliconix
Total Page 6 Pages
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