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SI1417EDH Datasheet

P-Channel 12-V (D-S) MOSFET

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New Product
P-Channel 12-V (D-S) MOSFET
Si1417EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.085 @ VGS = –4.5 V
–12 0.115 @ VGS = –2.5 V
0.160 @ VGS = –1.8 V
ID (A)
–3.3
–2.9
–2.4
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
BB XX
Lot Traceability
and Date Code
Part # Code
3 kW
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS –12
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
–3.3
–2.7
–2.4
–1.9
–8
–1.4
–0.9
1.56
1.0
0.81
0.52
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71412
S-03187—Rev. A, 05-Mar-01
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI1417EDH Datasheet

P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si1417EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = 9.6 V, VGS = 0 V
VDS = 9.6 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.3 A
VGS = 2.5 V, ID = 2.9 A
VGS = 1.8 V, ID = 1.0 A
VDS = 10 V, ID = 3.3 A
IS = 1.4 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 6 V, VGS = 4.5 V, ID = 3.3 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
Min Typ Max Unit
0.45
4
0.070
0.095
0.133
8
0.80
"1.5
"10
1
5
0.085
0.115
0.160
1.1
V
mA
mA
mA
A
W
S
V
5.8 8
1.3 nC
1.5
0.60
1.0
1.4 2.1
ms
4.9 7.5
4.9 7.5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
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2
3 6 9 12 15
VGS Gate-to-Source Voltage (V)
18
10,000
1,000
100
10
Gate Current vs. Gate-Source Voltage
TJ = 150_C
1
TJ = 25_C
0.1
0.01
0
36 9
VGS Gate-to-Source Voltage (V)
12
Document Number: 71412
S-03187Rev. A, 05-Mar-01


Part Number SI1417EDH
Description P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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